Ba(Mg, Ta)O₃-BaSnO₃ High-Q Dielectric Resonator

Dense ceramics with the chemical formula (1- X )Ba(Mg 1/3 Ta 2/3 )O 3 - X BaSnO 3 ( X =0-0.15) are prepared for use as dielectric resonators. The obtained dielectric constant and Q value for Ba(Mg 1/3 Ta 2/3 )O 3 were 24 and 43000 at 10 GHz, respectively. As X increased from 0 to 0.15, the temperature coefficient of resonant frequency decreased gradually from 5.4 to -0.5 ppm/ °C. At X =0.05, the Q value decreased drastically, and at X =0.10-0.15, the Q value increased to 33000 at 10 GHz. The specimens were investigated by scanning electron microscopy and X-ray diffraction analysis. It is found that Q improvement is not always dependent on the ordering structure of (1- X )Ba(Mg 1/3 Ta 2/3 )O 3 - X BaSnO 3 .