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GaAs-based 0.98 µm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200 µm long singlemode ridge lasers are characterised by Ith = 3 mA, f-3 dB = 45 GHz, f-3 dB(measured) = 43 GHz , and f-3 dB(max) = 84 GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76 GHz, respectively.
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Zhang et al. (1996) studied this question.
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