Structural and electrical properties of HfO2 and HfO2∕Gd2O3 gate stacks on p-GaAs substrates have been investigated. It has been demonstrated that the presence of thin layer of Gd2O3 between HfO2 and GaAs improves metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. It is also found that HfO2∕Gd2O3 stack can reduce the interfacial GaAs-oxide formation, thus reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion significantly improves the electrical properties of the dielectric stacks.
No takes yet. Share an insight, caveat, or question.
Dalapati et al. (2007) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: