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Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≊7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations.
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Song et al. (1996) studied this question.
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