Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions

We investigate the hot-carrier degradation of the 1/f-noise behavior of nand p-MOS transistors under typical bias conditions for analog and RF operation. The mechanisms responsible for the degradation and a model are discussed for both n- and p-MOS devices. A method for lifetime prediction concerning 1/f-noise degradation is presented and consequences for reliability assurance by measures of circuit design are drawn.