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A ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated. The TTFT is highly transparent and exhibits n-channel, enhancement-mode behaviour with a channel mobility as large as 0.20 cm 2 V −1 s −1 and a drain current on-to-off ratio of nearly 10 7 .
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Norris et al. (2003) studied this question.
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