Electroluminescent Devices with Ga₂O₃:Mn Thin-Film Emitting Layer Prepared by Sol-Gel Process

High-luminance electroluminescent devices have been newly developed using a Ga 2 O 3 :Mn thin film prepared by a sol-gel process. The sol-gel process, which eliminates the need for vacuum processes, enabled the inexpensive preparation of Ga 2 O 3 :Mn thin films on large-area thick ceramic sheet insulators. Gallium acethylacetonate, a relatively inexpensive and easy to handle material, was used as the Ga source material. Thin-film electroluminescent (TFEL) devices with a Ga 2 O 3 :Mn thin-film emitting layer prepared by the sol-gel process at a deposition temperature of 900°C and a postannealing temperature of 1000°C exhibited luminances of 1271 and 401 cd/m 2 when driven at 1 kHz and 60 Hz, respectively.