Answers are grounded in this paper and cite their sources.
Photoemission has been used to study the effects of chemisorption of nitric oxide (NO) on the valence-band and Ga and As 3d core levels of (110)-GaAs wafers. A parallel sequence of experiments using O2 has also been carried out. For exposures of 104–107 L at 300 K, NO dissociates and reacts with the surface more slowly than does O2. This stage involves defects and shows no photoenhancement. Above 107 L oxidation occurs, at least as fast for NO as for O2, and electronic excitation of the substrate by visible/near-ultraviolet irradiation during large NO exposures is found to enhance the formation of As–O species. Little N is detected on the surface after oxidation by NO. A model for the differences in oxidation behavior of NO and O2 is proposed.
No takes yet. Share an insight, caveat, or question.
Bermudez et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: