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A Si single electron transistor (SET) was fabricated by converting a one-dimensional Si wire on a SIMOX substrate into a small Si island with a tunnelling barrier at each end by means of pattern-dependent oxidation. With this structure, the total capacitance was reduced to ~2 aF, which enabled conductance oscillation of the SET at room temperature.
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Takahashi et al. (1995) studied this question.
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