Scintillation Characteristics of GAGG:Ce Single-Crystalline Films Grown by Liquid Phase Epitaxy

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The Gd3(Al,Ga)5O12:Ce single-crystalline films were grown by a liquid phase epitaxy (LPE) technique from BaO-B2O3-BaF2flux. The scintillation characteristics were investigated and compared to the bulk Gd3(Al2.7Ga2.3)O12:Ce single crystal (SC) grown by the Czochralski technique. The light yield (LY) and energy resolution were measured using an R6231 photomultiplier. At 5.5-MeV α-particles, the LY value of 7100 photons/MeV obtained for Gd3Al2.62Ga2.38O12:Ce-LPE sample is lower than that of 9310 photons/MeV for the Gd3(Al2.7Ga2.3)O12:Ce-SC sample, whereas an energy resolution of the LPE sample is better (5.9% versus 6.6%). The ratio of LY value under excitation with α- and γ-rays (α/γ ratio) was also determined. Faster scintillation decay time and lower slowcomponent content were obtained for LPE samples with respect to Gd3(Al2.7Ga2.3)O12:Ce-SC one.