Electron beam/optical intralevel mix-and-match lithography for deep submicron device fabrication

e-beam/optical intralevel mix-and-match lithography using a silicone-based positive photoresist (SPP), a Gaussian e-beam system, and an i-line stepper is described. In this technology, pattern width and placement depend only on the e-beam system to avoid the design rule limitation due to alignment error between the two lithographic tools and the optical resolution limit. A strategy for classifying pattern data into e-beam writing data and optical exposure data is introduced. A marked improvement in throughput and a linewidth accuracy of less than ±25 nm have been achieved by reducing the e-beam writing area.