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November 1, 1990Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches

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Authors

GOG. S. OehrleinUniversity of Maryland, College ParkJRJohn F. RembetskiPennsylvania State UniversityEPE. H. PayneIBM (United States)

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Oehrlein et al. (1990) studied this question.

synapsesocial.com/papers/6a71c677660549caf2c643b2https://doi.org/10.1116/1.584896
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