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The dispersion effect of current gain related to surface recombination in AlGaAs/GaAs HBTs has been studied. For an HBT with an emitter area of 3 × 20 µm2, the surface recombination current-to-total base current ratio is ~ 0.47 at < 100 MHz, and the ratio is decreased to zero at frequencies between 100 MHz and 3 GHz, clearly indicating that the current gain is dispersive.
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Ihn et al. (1998) studied this question.
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