A new channel-current model of GaAs MESFET suitable for applications to microwave computer-aided design (CAD) has been developed. This model includes the frequency-dispersion effects due to traps and thermal effects. The model parameters are extracted from pulsed I-V measurements at several ambient temperature and quiescent bias points. This model is verified by simulating nonlinear circuits, such as a power amplifier and a mixer.
No takes yet. Share an insight, caveat, or question.
Roh et al. (1997) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: