Transmission, energy distribution, and SE excitation of fast electrons in thin solid films

The transmission (ηT) and backscattering (ηR) of electrons with energies between 0.5 and 4 keV in thin films of Be, Al, Ge, Cu, and Ag, together with their secondary yields (δT, δR), were measured with a three-collector system. The SE efficiencies of backscattered electrons were 3 to 15 times greater than those of incident PE. The energy distributions of the transmitted electrons were measured with a spherical retarding field analyser. Average and most probable energies were obtained. Transmission characteristics could be normalized by the maximal penetration range R and in this way generality is achieved for initial energies up to 1 MeV.