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June 19, 2000Applied Physics Letters

High quality Ge on Si by epitaxial necking

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Authors

TLT. A. LangdoRedox Power Systems (United States)CLC. W. LeitzMIT Lincoln LaboratoryMCM. T. CurrieIIT@MIT

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Langdo et al. (2000) studied this question.

synapsesocial.com/papers/6a726edda7fbea1e4408ab53https://doi.org/10.1063/1.126754
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