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The properties of CVD tungsten films, produced by the hydrogen reduction of or , have been investigated to determine the suitability of the films for use as silicon integrated circuit metallizations. Both low pressure and atmospheric pressure flow system have been investigated. The tungsten films show excellent adhesion to silicon substrates, have resistivities between 6 and 15 μohm‐cm depending on thickness, and are easily etched into submicron patterns. In addition, data on the contact resistance to silicon and MOS properties of tungsten films from both deposition reactions have been measured.
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Melliar‐Smith et al. (1974) studied this question.
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