Metamorphic GaAs0.9P0.1tunnel diodes, designed for application to heteroepitaxial GaInP/GaAsP/Si multijunction solar cells, were grown on compositionally graded GaAsyP1-y/GaAs buffers by molecular beam epitaxy. Optimal growth conditions for high impurity doping were determined and tested using fabricated tunnel diode structures. Peak current densities of 103.9 A · cm-2and resistance-area products of 4.5 × 10-4Ω · cm2were obtained. Strong agreement between simulated and fabricated devices indicates excellent device quality with respect to optimized growth conditions and near-nominal operation. These results suggest that the optimized structures are promising for use within III-V/Si multijunction solar cells operating under high concentration.
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Chmielewski et al. (2014) studied this question.
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