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In molecular beam epitaxial GaAs, the maximum achievable Si doping concentration is 6×10^18 cm−3, above which Si precipitates and causes a decrease in free-carrier concentration and mobility. Novelty: ClaimNovelty.NOVEL_FINDING. Consensus alignment: ConsensusAlignment.NEUTRAL.

November 15, 1981Applied Physics Letters

The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs

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YCYoung G. ChaiHebei Normal University RCRobert H. ChowPain Management Institute CWC. E. C. WoodLawrence Livermore National Laboratory

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Chai et al. (1981) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2aa https://doi.org/10.1063/1.92562

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November 15, 1981Applied Physics Letters

The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs

View Full Paper

Ask AI

Bookmark

Authors

YCYoung G. ChaiHebei Normal University RCRobert H. ChowPain Management Institute CWC. E. C. WoodLawrence Livermore National Laboratory

Discussion

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chai et al. (1981) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2aa https://doi.org/10.1063/1.92562

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