Diluted disilane as silicon source for uniform and controllable n-type doping of Ga2O3 via molecular beam epitaxy

Obtaining uniform silicon concentration, especially with low concentrations (ranging from 1x10^16 cm^-3 to 1x10^18 cm^-3) by molecular beam epitaxy (MBE) has been challenging due to the oxidation of silicon solid source in the oxide environment. In this talk, I will present our recent results on Si doping of β-Ga2O3 (010) films by diluted disilane as the Si source is investigated using a hybrid plasma-assisted molecular beam epitaxy (hybrid-PAMBE). Uniform Si concentrations ranging from 3×10^16 cm^-3 to 2×10^19cm^-3 are achieved. We also investigated Ga sub-oxide as Ga source. The impact of using Ga metal vs Ga sub-oxide on Si doping was investigated.