Si atomic plane or delta ( delta )-doping of GaAs during MBE has been investigated using SIMS profiling optimised for high depth resolution. For layers in which almost all the Si atoms act as donors, post-growth diffusion occurs at the growth temperature with a diffusion coefficient estimated to be 9*10-17 cm2 s-1 at a substrate temperature of 550 degrees C. At temperatures greater than about 550 degrees C, a marked preferential migration towards the surface is observed, which may be due to surface segregation or possibly enhanced diffusion.
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Beall et al. (1988) studied this question.
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