Migration processes of co-doped Si and Be delta-planes in MBE-grown GaAs

This is the authors' abstract. We don't add key points for this paper.

The authors have used high depth-resolution SIMS profiling to investigate the broadening of delta-doped planes of Be and (Be+Si) in GaAs grown by molecular beam epitaxy. They have confirmed that concentration-dependent diffusion is the dominant broadening process for Be at growth temperatures