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August 1, 1984Applied Physics Letters

Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy

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Authors

PSP. SheldonUniversity of FreiburgKJK. M. JonesUnion UniversityRHR.E. HayesEngineering Systems (United States)

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Sheldon et al. (1984) studied this question.

synapsesocial.com/papers/6a6f72d88031ec7bb1dbc139https://doi.org/10.1063/1.95170
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A study of Ge/GaAs interfaces grown by molecular beam epitaxy1981 · 66 citations
  2. 2GaAs Shallow-homojunction solar cells on Ge-coated Si substrates1981 · 85 citations
  3. 3Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy1982 · 29 citations
  4. 4Molecular beam epitaxy of Ge–GaAs superlattices1981 · 22 citations