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June 1, 1981Journal of Applied Physics

A study of Ge/GaAs interfaces grown by molecular beam epitaxy

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Authors

RSR. A. StallEmcore (United States)CWC. E. C. WoodLawrence Livermore National LaboratoryNDN. DandekarEndometriosis

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Stall et al. (1981) studied this question.

synapsesocial.com/papers/6a9041d92a22b8e8a92da669https://doi.org/10.1063/1.329254
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Also Consider

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  1. 1’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’1978 · 63 citations
  2. 2Analysis of Thin-Film Germanium Epitaxially Deposited onto Calcium Fluoride1963 · 21 citations
  3. 3Dependence of the electrical characteristics of heavily Ge-doped GaAs on molecular beam epitaxy growth parameters1980 · 23 citations
  4. 4Nonalloyed Ohmic contacts to <i>n</i>-GaAs by molecular beam epitaxy1978 · 86 citations
  5. 5Ge–GaAs(110) interface formation1978 · 76 citations