Structural and morphological characterization of molecular beam epitaxy grown Si/Ge multilayer using x-ray scattering techniques

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Si/Ge multilayers are of great technological importance as is evident from the research studies of the past two decades. Here, we have presented a method for the morphological and structural characterization of such MBE grown epitaxial Si/Ge superlattice structures using simultaneous analysis of x-ray reflectivity and x-ray diffraction data, respectively. The consistent analysis of the data collected in the Indian Beamline at Photon Factory Synchrotron have allowed for the determination of electron density and strain profile as a function of depth.