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April 1, 1989Japanese Journal of Applied Physics

Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH4

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YKYasuo KoideNational Institute for Materials ScienceSZShigeaki ZaimaNagoya UniversityNONaoki OhshimaTokyo Denki University

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Koide et al. (1989) studied this question.

synapsesocial.com/papers/6a2076235e1fb797adf5ff33https://doi.org/10.1143/jjap.28.l690
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