Peculiarities of the growth kinetics of silicon-germanium alloy layers from silane and germane with an additional heated element in the vacuum chamber

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To study the disintegration of the molecules of hydrides at the surface of the growing layer and their influence on the rate of the epitaxial process a model of the growth kinetics of Si 1− x Ge x alloy layers from silane and germane by the molecular beam epitaxy method with SiH 4 and GeH 4 gas sources is considered. Through comparison of numerical simulation data and experimental relationships, the steady-state growth kinetics has been studied and a comparative analysis carried out of the efficiency of entry of Ge(Si) atoms into the growing layer both in the presence of Si and Ge atomic flows in the reactor (the so-called hot-wire method) and in their absence. The growth rates obtained with this method of epitaxial growth and with one of its modifications where the use is made of a sublimating silicon bar as an additional heated element have been compared. Peculiarities in the behavior of the dependence of the layer growth rate on its composition have been revealed and explained.