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The concentrations of Si-related sites in heavily Si-doped GaAs grown by MBE at 450°C and 65O°C are investigated by laser Raman spectroscopy. Almost all of the Si atoms are incorporated on Ga sites in both samples. However, in the 650°C sample, about one third of the Si atoms on Ga sites (Si Ga ) associate with Ga vacancies (V Ga ) to form the Si Ga -V Ga acceptors, which dominate the compensation mechanism.
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Uematsu et al. (1990) studied this question.
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