The first-order Raman scattering from heavily doped and highly compensated GaAs:Si has been measured with a constant impurity concentration of 1.1 × 1019 cm−3. The damped q=0 L− and L+ branches due to the compensation-limited low mobilities have been observed. The impurity-induced forbidden mode which had been found in uncompensated p-GaAs:Zn has not appeared in the measured spectra. The line-broadening of plasmon-coupled LO phonon, L(q), and line and peak shift of TO phonon line are attributed to the impurity-induced Fröhlich interaction and the self-energy effect, respectively.
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Kamijoh et al. (1986) studied this question.
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