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A method is presented for the measurement of the interface charge between an epitaxial layer and a substrate. Capacitance-voltage characteristics of Schottky contacts formed on the epilayer are measured and analyzed. The interface charge is determined by the modified built-in potential and capacitance. Experimental results are reported for p-type CdTe epilayers grown by metalorganic chemical vapor deposition on a p-type CdTe substrate using indium contacts.
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Goren et al. (1992) studied this question.
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