Recently a new differential reflectance technique has been reported in which the band-edge reflectance of a semiconducting crystal is modulated by irradiation of the surface with an intense ultraviolet light beam. It is proposed that the reflectance changes are caused in part by the blocking of interband transitions which occurs when electrons are pumped from the valence to the conduction band. A calculation shows the reflectance change to consist of a sharp oscillation at the band edge. The magnitude of the oscillation is in reasonable agreement with experiments on cadmium sulfide.
No takes yet. Share an insight, caveat, or question.
Gay et al. (1968) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: