Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams

Si epitaxial films on Si (111) substrates could be obtained by ionized-cluster-beam deposition at the low substrate temperatures of 300°–730°C in a vacuum range of 10 -7 –10 -6 Torr. The crystalline and electrical characteristics of Si epitaxial films were measured through use of the medium-energy ion channeling and backscattering, the Hall effect, and C - V measurements. The results show that epitaxial films of about the same quality as the substrate could be grown. The p-n junction diodes formed by the deposition of n-type Si on p-type Si substrates at low substrate temperatures had sharp junctions.