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December 15, 1967Applied Physics Letters

A COMPARISON OF THE HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP-III AND -V ELEMENTS IN Si AND Ge

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Authors

JMJ. W. MayerON Semiconductor (United States)JDJohn DaviesCulham Centre for Fusion EnergyLEL. ErikssonCenter for NanoScience

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Mayer et al. (1967) studied this question.

synapsesocial.com/papers/6a72bc6afe4101aa97e0ec3ehttps://doi.org/10.1063/1.1728214
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Also Consider

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  2. 2Solid Solubilities of Impurity Elements in Germanium and Silicon*1960 · 1,385 citations
  3. 3RANGE OF Xe<sup>133</sup> AND Ar<sup>41</sup> IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM1963 · 78 citations
  4. 4SOLUBILITY EFFECTS OF IMPLANTED IONS IN SEMICONDUCTORS1967 · 14 citations