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We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III–N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.
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Schubert et al. (2001) studied this question.
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