Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering

We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the fully relaxed ternary nano-ridge which thereby serves as a tunable base for the integration of diverse device hetero-layers. To demonstrate the flexibility of this approach, we realized an O-band nano-ridge laser containing three In 0.45 Ga 0.55 As quantum wells, which are pseudomorphically strained to an In 0.25 Ga 0.75 As nano-ridge base. The demonstration of an optically pumped nano-ridge laser operating around 1300 nm underlines the potential of this cost-efficient and highly scalable integration approach for silicon photonics.