Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP

In1−x Alx As epitaxial layers were grown on (100) InP substrates by the organometallic vapor phase epitaxy method. Undoped layers with mirror smooth surfaces were obtained for substrate temperatures of 600–650 °C. By adjusting the relative ratio of In and Al, lattice matched In0.52 Al0.48 As epilayers were reproducibly grown on InP substrates. X-ray measurements, scanning Auger analyses, and electron mobilities are presented. These results show that the quality of the epilayers obtained here was comparable to the best reported layers grown by other methods.