Field-effect transistors based on poly(p-phenylene vinylene) doped by ion implantation

We have fabricated metal-insulator-semiconductor field-effect transistors (MISFETs), with thin films of polycrystalline poly(p-phenylene vinylene) (PPV) as the semiconducting layer and report here the successful operation of a PPV MISFET based on the p-type doping of the polymer layer by ion implantation of iodine. The measured field-effect mobility of the charge carriers in this ion- implanted PPV is in the range of 10−7 to 10−8 cm2/V s. These values are in the same range as those obtained from a PPV MISFET in which the PPV was doped from the gas phase.