Electrically pumped near 1.3 µm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition are demonstrated for the first time. The threshold current and voltage under continuous wave operation of a 10 × 10 µm2 oxide aperture device were 7.6 mA and 2.8 V, respectively. The output power exceeded 0.1 mW and the slope efficiency was ~0.1 W/A.
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Sato et al. (2000) studied this question.
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