In 0.49 Ga 0.15 P/In 0.15 Ga 0.85 Asheterostructure pulsed doped-channelFETs

In0.49Ga0.15P/In0.15Ga0.85As heterostructure pulsed doped-channel FETs were fabricated and evaluated by DC and microwave measurements. This pulsed doped-channel approach provides a higher carrier density and a higher breakdown voltage, as compared to the conventional modulation-doped approach. A gm of 207 mS/mm, an fT of 16.7 GHz, and an fmax of 31.6 GHz, were obtained with a 1 µm-long gate at 300 K.