Shubnikov-de Haas Effect in Bismuth

The oscillatory component of the transverse magnetoresistance of bismuth has been measured as a function of magnetic field orientation at liquid helium temperatures. A derivative technique was employed. In addition to sets of periods, observed in the de Haas-van Alphen effect by Shoenberg and by Brandt and attributed by them, respectively, to the electron and light-hole Fermi surfaces, we observe a new set of isotropic short periods, P=0.72×10^-5 G^-1. The squares of the electron Fermi momenta m₀κ₁₁², m₀κ₂₂², m₀κ₃₃², m₀κ₂₃² are, respectively, 0.189, 45.4, 0.918, and -4.54m₀ milli-electron volts (meV). For the light holes, m₀κ₁₁² and m₀κ₃₃² are 1.51 and 21.0m₀ meV. For the new heavy carriers, m₀κ²=3.18m₀ meV. These data are fitted to two possible three-carrier models of the Fermi surface, and to a four-carrier model. Significant deviations of the oscillations from periodicity in H^-1 are observed for the electron part of the Fermi surface for certain magnetic field orientations.