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December 1, 1996Japanese Journal of Applied Physics

Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition

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Authors

XWX. H. WuYunnan UniversityPFP. FiniLinköping UniversitySKS. KellerUniversity of California, Santa Barbara

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Wu et al. (1996) studied this question.

synapsesocial.com/papers/6a73241ba177409e79a0ba91https://doi.org/10.1143/jjap.35.l1648
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Also Consider

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  1. 1Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition1996 · 269 citations
  2. 2Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 20) and (0001) Sapphire Substrates1988 · 157 citations
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  4. 4Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN1996 · 237 citations
  5. 5Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O31996 · 431 citations