Fermi-level pinning and intrinsic surface states in cleaved GaP

We have performed photoelectron spectroscopy of the clean GaP(110) surface, obtained by cleaving n-type specimens. The results show that Fermi-level stabilization occurs in a wide range of positions. In some cases nearly flat bands were obtained. The surface Fermi-level position in n-type GaP(110) is then due to extrinsic surface states, probably cleavage defects, as in the case of p-type samples. The density of these extrinsic states depends upon the quality of the cleave. Previously the Fermi-level pinning in n-type GaP(110) surfaces instead was attributed to (empty) intrinsic surface states located at 1.6±{}0.1 eV above the valence band. GaP(110) was considered an exception among III-V compounds, since in general atomic relaxation removes intrinsic surface states from the fundamental gap. The present results set a lower bound for the energetic position of the empty surface states slightly below the bottom of the conduction band. Therefore GaP(110) exhibits a gap practically free from intrinsic surface states, like the other III-V compounds so far investigated. We have also performed a spectroscopic study of the empty (intrinsic) surface states on the same surface by measuring the absorption edge of the P 2p core level. The result shows that the wave functions of the empty dangling-bond states, mainly cationic in origin, have a sizable localization on the anion site as well.