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Ge2Sb2Te5 (GST) is a promising candidate material for phase change memory (PCM) because its electrical resistivity changes dramatically between its amorphous and crystalline phases [1]. Understanding the different failure modes in PCM is important for increasing device stability and lifetime. Electric fields and thermal gradients produced by programing pulses induce elemental segregation in PCM [2, 3], which can lead to device failure. Here, we use scanning transmission electron microscopy (STEM) and energy dispersive x-ray spectroscopy (EDS) to study elemental segregation in PCM under electrical and thermal stress.
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Chan et al. (2021) studied this question.
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