Answers are grounded in this paper and cite their sources.
Using a dual-probe scanning tunneling microscope, we have performed three-terminal ballistic electron emission spectroscopy on Au∕GaAs(100) by contacting the patterned metallic thin film with one tip and injecting ballistic electrons with another tip. The collector current spectra agree with a Monte-Carlo simulation based on modified planar tunneling theory. Our results suggest that it is possible to study nanoscale metal-semiconductor interfaces without the requirement of an externally-contacted continuous metal thin film.
No takes yet. Share an insight, caveat, or question.
Yi et al. (2005) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: