The dependence of resistive switching of Ta/TaOX/HfOXdevice governed by general filamentary or novel defects-trapping mechanism on the operation current is demonstrated in this letter. The device with stable resistive switching, high nonlinearity, and robust self-compliance ~ 1 μA is demonstrated, which can be integrated in the vertical RRAM structure. Based on constant current density switching ( ~ 103A/cm2) governed by defects-trapping transport, where the low and high resistance states attributed to the resistance of Ta/TaOXlayer and device initial state, the switching current reduction by scaling down the cell size is proposed in transition metal oxide RRAM.
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Chen et al. (2014) studied this question.
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