We present calculations of the differential gain and threshold current densities for a 3.7 μm multiple quantum well structure consisting of a “well” composed of several periods of an InAs/InGaSb superlattice alternating with a quinternary alloy “barrier.” We find serious limitations to the optical properties of active regions composed of these multiple quantum wells, and propose a four-layer superlattice structure which corrects these problems.
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Flatté et al. (1997) studied this question.
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