⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

April 30, 2002Japanese Journal of Applied Physics

Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model

F. Schuler G. Tempel Hanno Melzner M. Jacob Paul Hendrickx D. Wellekens Jan Van Houdt

View at Publisher

Ask AI

Bookmark

Share

Abstract

Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model, Schuler, Franz, Tempel, Georg, Melzner, Hanno, Jacob, Michael, Hendrickx, Paul, Wellekens, Dirk, Houdt, Jan Van

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Schuler et al. (2002) studied this question.

synapsesocial.com/papers/6a7355a329b0f29a5dc67c39 https://doi.org/10.1143/jjap.41.2650

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1Effects of inserted methylene groups on structure and flexibility of molecule junction systemJapanese Journal of Applied Physics · Mon,
2Realizing high performance flexible multilevel memory based on charge storage in Au nanoparticles and electretsJapanese Journal of Applied Physics · Wed,
3Fully vertical AlN-on-SiC heterojunction diodesJapanese Journal of Applied Physics · Tue,
4Image registration using perspective transformation for multimodal analysis of crystalline defects in semiconductor wafersJapanese Journal of Applied Physics · Mon,
5Development of MoS 2 /SiO 2 /p-Si heterojunctions with an interfacial SiO 2 layer tuned to an appropriate thickness by CVDJapanese Journal of Applied Physics · Mon,

More from Japanese Journal of Applied Physics

Reservoir computing by a thin film embedded with magnetic impuritiesMon,
High-temperature AlN growth by metalorganic vapor phase epitaxy on sputtered AlN with various thicknessesFri,
Interface engineering of HfO 2 -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO 2 nucleation layersTue,
Temperature- and impurity-dependent analytical modeling and experimental validation of single-crystal silicon chevron electrothermal actuatorMon,
On the influence of microstructure on fluorite ferroelectric embedded memoriesTue,