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High Resolution Image Download MS PowerPoint Slide Hybrid metal-halide perovskites have potential as cost-effective gain media for laser technology because of their superior optoelectronic properties. Although lead-halide perovskites have been most widely studied to date, tin-based perovskites have been proposed as a less toxic alternative. In this Letter, we show that amplified spontaneous emission (ASE) in formamidinium tin triiodide (FASnI 3 ) thin films is supported by an observed radiative monomolecular charge recombination pathway deriving from its unintentional doping. Such a radiative component will be active even at the lowest charge-carrier densities, opening a pathway for ultralow light-emission thresholds. Using time-resolved THz photoconductivity analysis, we further show that the material has an unprecedentedly high charge-carrier mobility of 22 cm 2 V –1 s –1 favoring efficient transport. In addition, FASnI 3 exhibits strong radiative bimolecular recombination and Auger rates that are over an order of magnitude lower than for lead-halide perovskites. In combination, these properties reveal that tin-halide perovskites are highly suited to light-emitting devices.
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Milot et al. (2016) studied this question.
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