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We report on the fabrication and characterization of magnetic tunnel junctions consisting of a single layer of graphene as the tunnel barrier, sandwiched between two metallic ferromagnetic electrodes. We employ a fabrication process chosen to minimize oxidation of the electrode materials at the ferromagnet/graphene interfaces. The devices have low resistance-area products of 1.5--6 {} {μ}m², with low-temperature magnetoresistances of 1.5--3.4%. The temperature and bias dependencies of the resistance confirm that transport is dominated by tunneling processes rather than by any unintended pinholes.
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Li et al. (2014) studied this question.
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