Large magnetoresistance, quantum oscillations, and Fermi surface of compensated NdBi

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Significant nonsaturating magnetoresistance and quantum oscillations have been observed across various materials. Here, NdBi with a N\'eel temperature TN of 24 K has been successfully synthesized by the flux method and characterized by electric and magnetic measurements. The magnetoresistance reaches a remarkable value of 6.88×10⁴% at 16 T and 2 K, without showing any signs of saturation. The angle-dependent Shubnikov-de Haas oscillations have been performed, leading to experimentally mapping the Fermi surface and extracting the physical properties for each Fermi pocket. The Fermi surface is composed of three distinct types of pockets: an inner spherelike hole pocket denoted as β, an outer diamondlike hole pocket δ, both located at the Brillouin zone's Γ point, and three equivalent ellipsoidlike electron pockets γ located at the face centers of the cubic Brillouin zone. The ratio of electron and hole carrier densities, inferred from the volume of these pockets, is 0.96, suggesting that the compensation is responsible for the substantial magnetoresistance observed in NdBi. This finding is further corroborated by the Hall resistivity data, whose carrier densities are nₕ=5.04×10²⁰4pt0excm^-3 and nₑ=4.98×10²⁰4pt0excm^-3. In addition, the spin splitting is also observed between 15^∘ and 65^∘, providing more information on the Fermi surface.